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| BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES * RDS(ON), VGS@10V,IDS@500mA=3 * RDS(ON), VGS@2.5V,IDS@100mA=6 * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Very Low Leakage Current In Off Condition * Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. * ESD Protected * In compliance with EU RoHS 2002/95/EC directives 0.079(2.00) 0.070(1.80) 0.008(0.20) 0.003(0.08) 0.056(1.40) 0.047(1.20) 0.120(3.04) 0.110(2.80) MECHANICAL DATA * Case: SOT-23 Package * Terminals : Solderable per MIL-STD-750,Method 2026 * Marking : 138 * Apporx. Weight: 0.0003 ounce, 0.0084 gram 0.004(0.10)MAX. 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35) Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo lta g e Ga te - S o ur c e Vo lta g e C o nti nuo us D r a i n C ur r e nt P uls e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M PD T J ,T S TG R J A L i mi t 50 +20 300 2000 350 210 - 5 5 to + 1 5 0 357 0.006(0.15)MIN. * RDS(ON), VGS@4.5V,IDS@200mA=4 Uni ts V V mA mA mW O TA = 2 5 OC TA = 7 5 OC Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e M a xi m um P o we r D i s s i p a ti o n Junction-to Ambient Thermal Resistance(PCB mounted)2 C O C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE October 26,2010-REV.00 PAGE . 1 BSS138 ELECTRICALCHARACTERISTICS P a r a m e te r S ta ti c D ra i n-S o urc e B re a k d o wn Vo lta g e G a te Thr e s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e D ra i n-S o urc e On-S ta te Re s i s ta nc e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze r o Ga te Vo lta g e D ra i n C ur re nt Gate Body Leakage Forward Transconductance Dynamic To ta l Ga te C ha r g e Tur n- On Ti m e Tur n- Off Ti m e Inp ut C a p a c i ta nc e O utp ut C a p a c i ta nc e Re ve r s e Tra ns fe r C a p a c i ta nc e S o urc e - D r a i n D i o d e D i o d e F o rwa r d Vo lta g e C o nti nuo us D i o d e F o r wa r d C ur re nt P uls e D i o d e F o rwa r d C ur re nt V SD IS IS M IS=250mA , VGS=0V 0.82 1.2 300 2000 V mA mA Qg ton t o ff C i ss C oss C rss V D S =2 5 V , V GS =0 V f=1 .0 M H Z V D S =2 5 V, ID =2 5 0 m A VGS=4.5V VDD=30V , RL=100 ID=300mA , VGEN=10V RG=6 1 .0 40 ns 150 50 10 5 pF nC B V DSS V GS ( th) R D S ( o n) R D S ( o n) R D S ( o n) ID S S IGS S g fS V GS =0 V , ID =1 0 A V D S =V GS , ID = 2 5 0 A VGS=2.5V , I D=100mA VGS=4.5V , I D=200mA VGS=10V , I D=500mA VDS=50V , VGS=0V V GS =+ 2 0 V , V D S =0 V V D S =1 0 V , ID =2 5 0 m A 50 0 .8 100 2 .8 1 .8 1.6 1 .5 6 .0 4 .0 3.0 1 +1 0 A A mS V V S ym b o l Te s t C o nd i ti o n M i n. Typ . M a x. Uni ts Switching Test Circuit VIN VDD RL VOUT Gate Charge Test Circuit VGS VDD RL RG 1mA RG October 26,2010-REV.00 PAGE . 2 BSS138 Typical Characteristics Curves (TA=25 C,unless otherwise noted) O I D-Drain-to-Source Current (A) 1.2 1.0 0.8 1 I D-Drain-to-Source Current (A) V GS=10V~4.0V VDS =10V 0.8 0.6 0.4 3.0V 0.6 0.4 0.2 0 TJ = 25 C 0.2 0 o 0 1 2 3 4 5 0 1 2 3 4 5 6 V DS- Drain-to-Source Voltage (V) V GS- Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 5 5 R DS(ON) - On Resistance ( W ) R DS(ON) - On Resistance ( W ) 4 3 V GS=4.5V 4 3 I D =200mA 2 V GS=10V 2 I D =500mA 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1 0 0 2 4 6 8 10 I D - Drain Current (A) V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 VGS =10 V ID =500mA FIG.4- On Resistance vs Gate to Source Voltage R DS(ON) -On-Resistance(Normalized) -25 0 25 50 75 100 125 150 O T J - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature October 26,2010-REV.00 PAGE . 3 BSS138 10 I D =250m A V GS - Gate-to-Source Voltage(V) 1 V GS= 0V I S - Source Current (A) 8 6 4 2 0 T J = 125 OC T J =25 OC 0.1 T J =-55 OC 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0.2 0.4 0.6 0.8 1 1.2 1.4 Q g - Gate Charge (nC) V SD - Source-to-Drain Voltage (V) Fig.6 - Gate Charge Waveform V th - G-S Threshold Voltage(Normalized) BV DSS - Breakdown Voltage(Normlized) 1.2 I D = 250 m A 1.1 1.0 0.9 0.8 0.7 -50 Fig.7 Source-Drain Diode Forward Voltage 1.2 I D = 250 m A 1.15 1.1 1.05 1 0.95 0.9 -25 0 25 50 75 100 125 150 O -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature ( C) T J - Junction Temperature ( OC) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature October 26,2010-REV.00 PAGE . 4 BSS138 MOUNTING PAD LAYOUT SOT-23 ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. October 26,2010-REV.00 PAGE . 5 |
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